详情
二硫化铪晶体 HfS2 (Hafnium Disulfide)
晶体尺寸：~10毫米
电学性能：半导体
晶体结构：六边形
晶胞参数：a = b = 0.363 nm, c = 0.586 nm, α = β = 90°, γ = 120°
晶体类型：合成
晶体纯度：＞99.995%
晶体尺寸：~10毫米
电学性能：半导体
晶体结构：六边形
晶胞参数：a = b = 0.363 nm, c = 0.586 nm, α = β = 90°, γ = 120°
晶体类型：合成
晶体纯度：＞99.995%
X-ray diffraction on a HfS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4
Powder X-ray diffraction (XRD) of a single crystal HfS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal HfS2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal HfS2. Measurement was performed with a 785 nm Raman system at room temperature.
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